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SOLVED: The growth of the SiO2 layer through the oxidation of silicon can be divided into dry oxidation and wet oxidation. Wet oxidation can proceed while synthesizing H2O by using oxygen gas saturated with H2O or by directly reacting hydrogen and oxygen. In the case of growing SiO2 using these three methods, the constants of the Deal-Grove model are summarized in the following table:Oxidant diffusion: B = C1 exp(E/kT)Rate constants describing (111) silicon oxidation kinetics at 1 atm. total pre
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