SK Hynix, a direct rival of Samsung, has dethroned it in the DRAM market after 33 consecutive years of dominance.

Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025.

Samsung Electronics Co. pledged to strengthen its position in the high-bandwidth memory chip market this year, in response to shareholder criticism over its underperformance in the lucrative ...