Samsung Electronics Co. pledged to strengthen its position in the high-bandwidth memory chip market this year, in response to ...
However, according to the findings of a Chinese semiconductor researcher, the die size of CXMT's 16 Gb DDR5 memory IC is 40% larger than that of a competing Samsung chip, which means that it is ...
Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025.