Santa Clara, CA and Kyoto, Japan, July 12, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced its fourth generation 650V fast recovery diodes (FRDs), the RFL/RFS Series, featuring low forward ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
Taiwan Semiconductor launches a new series of automotive-grade, low-loss diodes in three popular industry-standard packages. They provide an automotive-level performance upgrade in existing designs ...
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