Semiconductor Engineering

Stress-Related Local Layout Effects In FinFET Technology And Device Design Sensitivity

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
Semiconductor Engineering

FinFET Impacts For Reducing Physical IP Power Consumption

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...
Business Wire

Cadence Expands Virtuoso Platform with Enhanced System Design, Advanced Node Support Down to 5nm, and Simulation-Driven Layout

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ: CDNS) today introduced major enhancements to its Cadence ® Virtuoso ® custom IC design platform that improve electronic system ...
Electronic Design

FinFETs Herald A Seismic Shift In Semiconductor Technology

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...
Business Wire

Cadence Achieves EDA Certification for TSMC 5nm and 7nm+ FinFET Process Technologies to Facilitate Mobile and HPC Design Creation

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...
Electronic Design

Identifying transistor-level yield limiters in the FinFET era

As the digital semiconductor manufacturing process moves into the FinFET era, more and more front-end-of-line (FEOL) defects are observed due to extremely small feature size and complex manufacturing ...
EDN

FinFET impact on dynamic power

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...
Nasdaq

Keysight, Synopsys, and Ansys Accelerate RFIC Semiconductor Design with New Reference Flow for TSMC’s Advanced 4nm RF FinFET Process

New reference flow offers open, efficient radio frequency design solution using TSMC N4PRF process Industry-leading electromagnetic simulation tools boost WiFi-7 system performance and power ...
EDN

Address FinFET test challenges

FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...
Nasdaq

Keysight, Synopsys, and Ansys Accelerate RFIC Semiconductor Design with New Reference Flow for TSMC's Most Advanced 4nm RF FinFET Process

New reference flow offers open, efficient radio frequency design solution that supports streamlined migration from previous process nodes Industry-leading electromagnetic simulation tools boost 5G/6G ...