A new integrated poly-SiGe-based piezoresistive pressure sensor has been directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe ...
MEMS are primarily transducer systems that can control or sense chemical, optical, or physical quantities, such as fluids, acceleration, or radiation. A MEMS device/transducer possesses an electrical ...
Two-dimensional (2D) materials, thin crystalline substances only a few atoms thick, have numerous advantageous properties compared to their three-dimensional (3D) bulk counterparts. Most notably, many ...
—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...
Professor Tim Cheng adn Dimitri Strukov at the University of California at Santa Barbara described how 3-D techniques could realize the dream of semiconductor memristors. Using a hybrid 3-D ...
Flagship researchers integrate graphene and quantum dots with CMOS technology to create an array of photodetectors. Flagship researchers integrate graphene and quantum dots with CMOS. Silicon-based ...
Achievement "opens up completely new applications for the already commercially successful OLED-technology." Together at last: integration of RGB + NIR-OLEDs in CMOS-silicon. For the first time ever, ...
As a follow-up to my previous blog, Integration Choices: Analog Filters vs. Digital Filters, the next step would be to discuss how to integrate filters into the IC itself. What techniques and ...
(Nanowerk News) Over the past 40 years, microelectronics have advanced by leaps and bounds thanks to silicon and CMOS (Complementary metal-oxide semiconductors) technology, making possible computing, ...
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